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POSTDOCTORAL RESEARCHER FOR THE DEVELOPMENT OF NANOPOROUS GRAPHENE FIELD-EFFECT TRANSISTOR SENSORS

Descripción de la oferta de empleo

As a flagship research center in nanoscience and nanotechnology, our mission is to open and explore new frontiers of knowledge at the nanoscale, and bring value to society in the form of new understanding, capabilities and innovation, while inspiring and providing broad training to the next generations of researchers.
Our values are Commitment, Collaboration and Transformation.
Our research lines focus on the newly-discovered physical and chemical properties that arise from the behaviour of matter at the nanoscale.
ICN2 has been awarded with the Severo Ochoa Center of Excellence distinction for three consecutive periods ( and and ).
ICN2 comprises 19 Research Groups, 7 Technical Development and Support Units and Facilities, and 2 Research Platforms, covering different areas of nanoscience and nanotechnology.
Job Title.
Postdoctoral researcher for the development of nanoporous graphene field-effect transistor sensors Research area or group.
Atomic Manipulation and Spectroscopy Description of Group/Project.
The AMS group focus on the atomic-scale engineering of the quantum properties of novel nanomaterials.
Our aim is to understand and control quantum phenomena with atomic precision by chemical and structural manipulation, nanostructuring and interfacing materials that are identified as strategic in the roadmap for new technologies (hybrid metal-organic heterostructures, graphene-based nanostructures, 2D materials, topological insulators...).
This position is related to MOLESENSE (PIDOB-C63), a project within the program of the Spanish Research Agency PROYECTOS DE GENERACIÓN DE CONOCIMIENTO, dedicated to the development of novel graphene-based nanoarchitectures and their application in field-effect transistor chemisensors [Moreno et al., Science.
)].
Main Tasks and responsibilities.
The candidate will optimize the transfer of nanoporous graphene synthesized on metallic susbtrates to dielectric substrates where the FETs will be fabricated.
The quality of transferred layers will be characterized by Raman.
In a second step, the candidate will participate in the optimization of the device parameters (electrode material, geometry, dielectric...) Requirements.
Education.
PhD level background in physics, chemistry, nanoscience or engineering Knowledge and Professional Experience.
Background in condensed matter, physics, chemistry and materials science at the nanoscale.
Experience as experimental nanoscientist, transfer of 2D materials, fabrication of nanodevices, graphene-based technologies.
Personal competences.
Skills in experimental physics and nanoengineering, and in data analysis.
Proficiency in English and demonstrated skills in oral and written communication.
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Detalles de la oferta

Empresa
  • Sin especificar
Localidad
  • En toda España
Dirección
  • Sin especificar - Sin especificar
Fecha de publicación
  • 08/04/2025
Fecha de expiración
  • 07/07/2025
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